Cryogenic rf test of the first SRF cavity etched in an rf Ar/Cl2 plasma

An apparatus and a method for etching of the inner surfaces of superconducting radio frequency (SRF) accelerator cavities are described. The apparatus is based on the reactive ion etching performed in an Ar/Cl2 cylindrical capacitive discharge with reversed asymmetry. To test the effect of the plasm...

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Bibliographic Details
Published inAIP advances Vol. 7; no. 12; pp. 125016 - 125016-5
Main Authors Upadhyay, J., Palczewski, A., Popović, S., Valente-Feliciano, A.-M., Im, Do, Phillips, H. L., Vušković, L.
Format Journal Article
LanguageEnglish
Published Melville American Institute of Physics 01.12.2017
American Institute of Physics (AIP)
AIP Publishing LLC
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Summary:An apparatus and a method for etching of the inner surfaces of superconducting radio frequency (SRF) accelerator cavities are described. The apparatus is based on the reactive ion etching performed in an Ar/Cl2 cylindrical capacitive discharge with reversed asymmetry. To test the effect of the plasma etching on the cavity rf performance, a 1497 MHz single cell SRF cavity was used. The single cell cavity was mechanically polished and buffer chemically etched and then rf tested at cryogenic temperatures to provide a baseline characterization. The cavity’s inner wall was then exposed to the capacitive discharge in a mixture of Argon and Chlorine. The inner wall acted as the grounded electrode, while kept at elevated temperature. The processing was accomplished by axially moving the dc-biased, corrugated inner electrode and the gas flow inlet in a step-wise manner to establish a sequence of longitudinally segmented discharges. The cavity was then tested in a standard vertical test stand at cryogenic temperatures. The rf tests and surface condition results, including the electron field emission elimination, are presented.
Bibliography:USDOE Office of Science (SC), High Energy Physics (HEP)
USDOE Office of Science (SC), Nuclear Physics (NP)
SC0014397; AC05-06OR23177
JLAB-ACC-16-2299; DOE/OR/23177-3878; arXiv:1605.06494
ISSN:2158-3226
2158-3226
DOI:10.1063/1.4991888