Cryogenic rf test of the first SRF cavity etched in an rf Ar/Cl2 plasma
An apparatus and a method for etching of the inner surfaces of superconducting radio frequency (SRF) accelerator cavities are described. The apparatus is based on the reactive ion etching performed in an Ar/Cl2 cylindrical capacitive discharge with reversed asymmetry. To test the effect of the plasm...
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Published in | AIP advances Vol. 7; no. 12; pp. 125016 - 125016-5 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
Melville
American Institute of Physics
01.12.2017
American Institute of Physics (AIP) AIP Publishing LLC |
Subjects | |
Online Access | Get full text |
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Summary: | An apparatus and a method for etching of the inner surfaces of superconducting radio frequency (SRF) accelerator cavities are described. The apparatus is based on the reactive ion etching performed in an Ar/Cl2 cylindrical capacitive discharge with reversed asymmetry. To test the effect of the plasma etching on the cavity rf performance, a 1497 MHz single cell SRF cavity was used. The single cell cavity was mechanically polished and buffer chemically etched and then rf tested at cryogenic temperatures to provide a baseline characterization. The cavity’s inner wall was then exposed to the capacitive discharge in a mixture of Argon and Chlorine. The inner wall acted as the grounded electrode, while kept at elevated temperature. The processing was accomplished by axially moving the dc-biased, corrugated inner electrode and the gas flow inlet in a step-wise manner to establish a sequence of longitudinally segmented discharges. The cavity was then tested in a standard vertical test stand at cryogenic temperatures. The rf tests and surface condition results, including the electron field emission elimination, are presented. |
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Bibliography: | USDOE Office of Science (SC), High Energy Physics (HEP) USDOE Office of Science (SC), Nuclear Physics (NP) SC0014397; AC05-06OR23177 JLAB-ACC-16-2299; DOE/OR/23177-3878; arXiv:1605.06494 |
ISSN: | 2158-3226 2158-3226 |
DOI: | 10.1063/1.4991888 |