Simultaneous Conduction and Valence Band Regulation of Indium-Based Quantum Dots for Efficient H2 Photogeneration

• Published in: Nanomaterials (Basel, Switzerland) Vol. 11; no. 5; p. 1115
• Main Authors: Li, Xiu-Ping, Huang, Rong-Jin, Chen, Cong, Li, Tianduo, Gao, Yu-Ji
• Format: Journal Article
• Language: English
• Published: Basel MDPI AG 26.04.2021; MDPI
• Subjects: artificial photosynthesis; bandgap engineering; Cadmium; Chalcogenides; Conduction; Conduction bands; Copper; Crystal structure; Energy gap; Evolution; Hydrogen evolution; Indium; Metal ions; Morphology; Nanocrystals; Noble metals; Photocatalysis; Quantum dots; Radiation; Spectrum analysis; transition metal doping; Transition metals; Valence band; Zinc; United States > US; China; Japan
• ISSN: 2079-4991; 2079-4991
• DOI: 10.3390/nano11051115

Indium-based chalcogenide semiconductors have been served as the promising candidates for solar H2 evolution reaction, however, the related studies are still in its infancy and the enhancement of efficiency remains a grand challenge. Here, we report that the photocatalytic H2 evolution activity of quantized indium chalcogenide semiconductors could be dramatically aroused by the co-decoration of transition metal Zn and Cu. Different from the traditional metal ion doping strategies which only focus on narrowing bandgap for robust visible light harvesting, the conduction and valence band are coordinately regulated to realize the bandgap narrowing and the raising of thermodynamic driving force for proton reduction, simultaneously. Therefore, the as-prepared noble metal-free Cu0.4-ZnIn2S4 quantum dots (QDs) exhibits extraordinary activity for photocatalytic H2 evolution. Under optimal conditions, the Cu0.4-ZnIn2S4 QDs could produce H2 with the rate of 144.4 μmol h−1 mg−1, 480-fold and 6-fold higher than that of pristine In2S3 QDs and Cu-doped In2S3 QDs counterparts respectively, which is even comparable with the state-of-the-art cadmium chalcogenides QDs.