Ejection of Au and Si nanocrystals from Au implanted Si(100) by MeV heavy ion irradiation

•MeV heavy ion induced ejection of Au and Si nanocrystals from Au doped amorphous Si layer in 32keV Au implanted Si(100) is reported.•The size distribution of Au nanocrystals collected on catcher exhibited inverse power law dependence with a decay exponent of 2.•AFM studies on irradiated sample show...

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Bibliographic Details
Published inApplied surface science Vol. 283; pp. 128 - 133
Main Author Mohapatra, S.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 15.10.2013
Elsevier
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Summary:•MeV heavy ion induced ejection of Au and Si nanocrystals from Au doped amorphous Si layer in 32keV Au implanted Si(100) is reported.•The size distribution of Au nanocrystals collected on catcher exhibited inverse power law dependence with a decay exponent of 2.•AFM studies on irradiated sample showed the presence of surface craters along with hillocks.•Formation of Au and Si nanocrystals is attributed to localized melting due to thermal spike phase of MeV ion induced atomic displacement cascades. Si(100) substrates implanted with 32keV Au− ions, were irradiated with 3MeV Au3+ ions at an angle of 60°. Transmission electron microscopy (TEM) studies on sputtered particles collected on catcher grids revealed the presence of Au and Si nanocrystals. The size distribution of collected Au nanocrystals exhibited inverse power law dependence with a decay exponent of 2. Atomic force microscopy (AFM) analysis of irradiated sample showed the presence of surface craters along with hillocks. The formation of Au and Si nanocrystals in MeV ion irradiated Au doped amorphous Si layer can be attributed to the localized melting due to thermal spike phase of atomic displacement cascades produced by MeV Au ion impacts.
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ISSN:0169-4332
1873-5584
DOI:10.1016/j.apsusc.2013.06.055