Measurement and analysis of neutron-induced soft errors in sub-half-micron CMOS circuits

Neutron-induced soft error rates (SERs) of subhalf-micron CMOS SRAM and Latch circuits were studied both experimentally and analytically to investigate cosmic ray neutron-induced soft errors (SEs). Because the neutron beam used in the measurement has an energy spectrum similar to that of sea-level a...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 45; no. 7; pp. 1453 - 1458
Main Authors Tosaka, Y., Satoh, S., Itakura, T., Ehara, H., Ueda, T., Woffinden, G.A., Wender, S.A.
Format Journal Article
LanguageEnglish
Published IEEE 01.07.1998
Subjects
Atmospheric measurements
Atmospheric modeling
Circuit simulation
CMOS logic circuits
Energy measurement
Error analysis
Latches
Neutrons
Particle beams
Random access memory
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Summary:Neutron-induced soft error rates (SERs) of subhalf-micron CMOS SRAM and Latch circuits were studied both experimentally and analytically to investigate cosmic ray neutron-induced soft errors (SEs). Because the neutron beam used in the measurement has an energy spectrum similar to that of sea-level atmospheric neutrons, our SER data corresponds to those induced by cosmic ray neutrons. The /spl alpha/-particle induced SERs were also measured for comparison with the neutron-induced SER's. Neutron-induced SEs occurred in both circuits. On the other hand, /spl alpha/-induced SEs occurred in SRAM, but not in the Latch circuits. The measured SERs agreed with simulated results. We discussed the significance of how cosmic ray neutrons affects CMOS circuits at ground level.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/16.701475