Ultrafast optical spectroscopy of semiconducting and plasmonic nanostructures and their hybrids

The knowledge of the carrier dynamics in nanostructures is of fundamental importance for the development of (opto)electronic devices. This is true for semiconducting nanostructures as well as for plasmonic nanoparticles (NPs). Indeed, improvement of photocatalytic efficiencies by combining semicondu...

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Published inNanotechnology Vol. 32; no. 2; pp. 025703 - 25718
Main Authors Catone, Daniele, Di Mario, Lorenzo, Martelli, Faustino, O'Keeffe, Patrick, Paladini, Alessandra, Stefano Pelli Cresi, Jacopo, Sivan, Aswathi K, Tian, Lin, Toschi, Francesco, Turchini, Stefano
Format Journal Article
LanguageEnglish
Published England IOP Publishing 08.01.2020
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Summary:The knowledge of the carrier dynamics in nanostructures is of fundamental importance for the development of (opto)electronic devices. This is true for semiconducting nanostructures as well as for plasmonic nanoparticles (NPs). Indeed, improvement of photocatalytic efficiencies by combining semiconductor and plasmonic nanostructures is one of the reasons why their ultrafast dynamics are intensively studied. In this work, we will review our activity on ultrafast spectroscopy in nanostructures carried out in the recently established EuroFEL Support Laboratory. We have investigated the dynamical plasmonic responses of metal NPs both in solution and in 2D and 3D arrays on surfaces, with particular attention being paid to the effects of the NP shape and to the conversion of absorbed light into heat on a nano-localized scale. We will summarize the results obtained on the carrier dynamics in nanostructured perovskites with emphasis on the hot-carrier dynamics and in semiconductor nanosystems such as ZnSe and Si nanowires, with particular attention to the band-gap bleaching dynamics. Subsequently, the study of semiconductor-metal NP hybrids, such as CeO2-Ag NPs, ZnSe-Ag NPs and ZnSe-Au NPs, allows the discussion of interaction mechanisms such as charge carrier transfer and Förster interaction. Finally, we assess an alternative method for the sensitization of wide band gap semiconductors to visible light by discussing the relationship between the carrier dynamics of TiO2 NPs and V-doped TiO2 NPs and their catalytic properties.
Bibliography:NANO-126956.R1
ISSN:0957-4484
1361-6528
DOI:10.1088/1361-6528/abb907