Periodic mode shift in vertical cavities grown by molecular beam epitaxy

• Published in: IEEE photonics technology letters Vol. 7; no. 3; pp. 235 - 237
• Main Authors: Eng, L.E., Toh, K., Bacher, K., Harris, J.S., Chang-Hasnain, C.J.
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.03.1995; Institute of Electrical and Electronics Engineers
• Subjects: Bonding; Desorption; Exact sciences and technology; Frequency division multiplexing; Fundamental areas of phenomenology (including applications); Gallium arsenide; Indium; Lasers; Molecular beam epitaxial growth; Molecular beam epitaxy; Optical arrays; Optics; Physics; Semiconducting aluminum compounds; Semiconducting gallium arsenide; Semiconductor growth; Semiconductor lasers; laser diodes; Substrates; Surface emitting lasers; Temperature; Thermal gradients; Vertical cavity surface emitting lasers; Wafer bonding; Wavelength division multiplexing; Aluminium arsenides; Fabrication; Vertical cavity laser; Gallium arsenides; Inorganic compounds; Semiconductor lasers; Surface emitting laser; Molecular beam epitaxy; Binary compounds; Wavelength division multiplexing; Infrared radiation; Experimental study
• ISSN: 1041-1135; 1941-0174
• DOI: 10.1109/68.372731

We demonstrate a spatially-chirped resonant wavelength in vertical cavities grown by molecular beam epitaxy (MBE). The wavelength shift is achieved by varying the GaAs growth rate across the wafer using backside temperature patterns. We have demonstrated, for the first time, 8-nm periodic cavity mode shifts in GaAs-AlAs Fabry-Perot vertical cavities. The measured rate of mode shift is 5.3 nm/mm. Patterns transfer with a resolution on the millimeter scale.< >