Radiation and postirradiation functional upsets in CMOS SRAM
The CMOS SRAM radiation and postirradiation functional upsets are investigated as a function of total dose, dose rate, annealing time and functional tests. Local and conventional X-ray as well as LINAC and Sr-90 irradiation procedures were performed. A model explaining the experimental results is di...
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| Published in | IEEE transactions on nuclear science Vol. 43; no. 6; pp. 3109 - 3114 |
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| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
IEEE
01.12.1996
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| Subjects | |
| Online Access | Get full text |
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| Abstract | The CMOS SRAM radiation and postirradiation functional upsets are investigated as a function of total dose, dose rate, annealing time and functional tests. Local and conventional X-ray as well as LINAC and Sr-90 irradiation procedures were performed. A model explaining the experimental results is discussed. |
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| AbstractList | The CMOS SRAM radiation and postirradiation functional upsets are investigated as a function of total dose, dose rate, annealing time and functional tests. Local and conventional X-ray as well as LINAC and Sr-90 irradiation procedures were performed. A model explaining the experimental results is discussed. The CMOS SRAM radiation and postirradiation functional upsets are investigated as a function of total dose, dose rate, annealing time and functional tests. Local and conventional X-ray as well as LINAC and Sr-90 irradiation procedures were performed. A model explaining the experimental results is discussed |
| Author | Chumakov, A.I. Yanenko, A.V. |
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| Cites_doi | 10.1109/23.45392 10.1063/1.107126 10.1109/23.211381 10.1109/23.211421 10.1109/23.45443 10.1109/23.25435 10.1109/23.372136 10.1109/TNS.1987.4337543 |
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| SubjectTerms | Annealing Decoding Driver circuits Electrons Error correction Linear particle accelerator MOSFET circuits Random access memory Read-write memory Testing |
| Title | Radiation and postirradiation functional upsets in CMOS SRAM |
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