Radiation and postirradiation functional upsets in CMOS SRAM

The CMOS SRAM radiation and postirradiation functional upsets are investigated as a function of total dose, dose rate, annealing time and functional tests. Local and conventional X-ray as well as LINAC and Sr-90 irradiation procedures were performed. A model explaining the experimental results is di...

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Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 43; no. 6; pp. 3109 - 3114
Main Authors Chumakov, A.I., Yanenko, A.V.
Format Journal Article
LanguageEnglish
Published IEEE 01.12.1996
Subjects
Annealing
Decoding
Driver circuits
Electrons
Error correction
Linear particle accelerator
MOSFET circuits
Random access memory
Read-write memory
Testing
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Summary:The CMOS SRAM radiation and postirradiation functional upsets are investigated as a function of total dose, dose rate, annealing time and functional tests. Local and conventional X-ray as well as LINAC and Sr-90 irradiation procedures were performed. A model explaining the experimental results is discussed.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9499
1558-1578
DOI:10.1109/23.556912