Structural properties of GaN films grown on multilayer graphene films by pulsed sputtering

GaN films were grown on a multilayer graphene (MLG)/amorphous SiO2 stack by pulsed sputtering deposition and their structural properties were investigated. The GaN films on MLG show high c-axis orientation. In addition, the GaN films exhibit coexisting zincblende and wurtzite phases, but the zincble...

Full description

Saved in:
Bibliographic Details
Published inApplied physics express Vol. 7; no. 8; pp. 85502 - 85504
Main Authors Shon, Jeong Woo, Ohta, Jitsuo, Ueno, Kohei, Kobayashi, Atsushi, Fujioka, Hiroshi
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.08.2014
Online AccessGet full text

Cover

More Information
Summary:GaN films were grown on a multilayer graphene (MLG)/amorphous SiO2 stack by pulsed sputtering deposition and their structural properties were investigated. The GaN films on MLG show high c-axis orientation. In addition, the GaN films exhibit coexisting zincblende and wurtzite phases, but the zincblende phase is suppressed by the insertion of AlN interlayers. The polarity control of the GaN films was demonstrated using AlN interlayers with and without surface oxidation. These results indicate that the proposed technique can yield high-quality Ga-polarity GaN films on MLG for potential use in large-area GaN-based optical and electronic devices.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.7.085502