Hysteresis and reversible red-shift in the reflectance spectra of single-layer porous silicon during exposure to various organic vapors

We fabricated single-layer porous silicon (PSi) on a p + -type silicon wafer and investigated its reflectance spectrum on exposure to different concentrations of various organic vapors. When the PSi sample was exposed to methanol, acetone, ethanol, and isopropanol vapors, the reflectance spectrum pr...

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Bibliographic Details
Published inJournal of the Korean Physical Society Vol. 64; no. 5; pp. 640 - 644
Main Authors Kim, Han-Jung, Choi, Dae-Geun, Kim, Young-You, Lee, Jeong-Hwa
Format Journal Article
LanguageEnglish
Published Seoul The Korean Physical Society 01.03.2014
한국물리학회
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Summary:We fabricated single-layer porous silicon (PSi) on a p + -type silicon wafer and investigated its reflectance spectrum on exposure to different concentrations of various organic vapors. When the PSi sample was exposed to methanol, acetone, ethanol, and isopropanol vapors, the reflectance spectrum promptly shifted toward longer wavelengths by about 1.5, 4.5, 7.0, and 9.0 nm, respectively. The PSi sample showed excellent sensing ability under different concentrations and types of organic vapors. In addition, a slight hysteresis of the red-shift was observed during repeated exposure to an organic vapor at different concentrations. After the organic vapors had been removed, the reflectance spectrum promptly returned to its original state.
Bibliography:G704-000411.2014.64.5.009
ISSN:0374-4884
1976-8524
DOI:10.3938/jkps.64.640