Fabrication of low-curvature 2 in. GaN wafers by Na-flux coalescence growth technique

Low-curvature and large-diameter GaN wafers are in high demand for the development of GaN-based electronic devices. Recently, we have proposed the coalescence growth of GaN by the Na-flux method and demonstrated the possibility of enlarging the diameter of high-quality GaN crystals. In the present s...

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Published inApplied physics express Vol. 7; no. 3; pp. 35503 - 35506
Main Authors Imade, Mamoru, Imanishi, Masayuki, Todoroki, Yuma, Imabayashi, Hiroki, Matsuo, Daisuke, Murakami, Kosuke, Takazawa, Hideo, Kitamoto, Akira, Maruyama, Mihoko, Yoshimura, Masashi, Mori, Yusuke
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.03.2014
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Summary:Low-curvature and large-diameter GaN wafers are in high demand for the development of GaN-based electronic devices. Recently, we have proposed the coalescence growth of GaN by the Na-flux method and demonstrated the possibility of enlarging the diameter of high-quality GaN crystals. In the present study, 2 in. GaN wafers with a radius of curvature larger than 100 m were successfully produced by the Na-flux coalescence growth technique. FWHMs of the 002 and 102 GaN X-ray rocking curves were below 30.6 arcsec, and the dislocation density was less than the order of 102 cm−2 for the entire area of the wafer.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.7.035503