Self-terminating growth in hexagonal boron nitride by metal organic chemical vapor deposition
In this work, we demonstrate the growth of atomically smooth few-layer hexagonal boron nitride (h-BN) on sapphire substrates by metal organic chemical vapor deposition using triethylboron (TEB) and NH3 as precursors. Changing the V/III ratio in a certain temperature and pressure range was found to c...
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Published in | Applied physics express Vol. 7; no. 7; pp. 71004 - 71007 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
The Japan Society of Applied Physics
01.07.2014
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Online Access | Get full text |
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Summary: | In this work, we demonstrate the growth of atomically smooth few-layer hexagonal boron nitride (h-BN) on sapphire substrates by metal organic chemical vapor deposition using triethylboron (TEB) and NH3 as precursors. Changing the V/III ratio in a certain temperature and pressure range was found to change the growth mode from random 3D nucleation to self-terminating growth. Infrared reflectance and Raman spectroscopy were used to identify the h-BN phase of these films. Atomic force microscopy measurements confirm that the surfaces are smooth and continuous even over atomic steps on the surface of the substrate. Using X-ray reflectance measurements, the thicknesses of films grown under self-terminating conditions were determined to be ∼1.6 nm and independent of the growth time (1 to 60 min) and TEB flux rate. On the basis of the results of this study, a possible mechanism for the observed self-terminating growth behavior is discussed. |
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ISSN: | 1882-0778 1882-0786 |
DOI: | 10.7567/APEX.7.071004 |