Characterization of surface mobility in MOS structures containing interfacial cesium ions

The degradation of inversion-layer electron and hole mobility in silicon MOS devices by interface charge at 295 and 77 K is discussed. The charge was controllably introduced using cesium implanted into the gate oxide and subsequently diffused to the oxide-substrate interface. The charged-impurity-sc...

Full description

Saved in:
Bibliographic Details
Published inIEEE transactions on electron devices Vol. 36; no. 1; pp. 96 - 100
Main Authors Watt, J.T., Fishbein, B.J., Plummer, J.D.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.01.1989
Institute of Electrical and Electronics Engineers
Subjects
Applied sciences
Charge carrier processes
Compound structure devices
Contracts
Degradation
Doping
Electronics
Exact sciences and technology
Impurities
MOS devices
MOSFET circuits
Scattering
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Temperature
Threshold voltage
Charge carrier mobility
MOS structure
Silicon
MOS transistor
MOS capacity
Inversion layer
Thermal degradation
Online AccessGet full text

Cover

More Information
Summary:The degradation of inversion-layer electron and hole mobility in silicon MOS devices by interface charge at 295 and 77 K is discussed. The charge was controllably introduced using cesium implanted into the gate oxide and subsequently diffused to the oxide-substrate interface. The charged-impurity-scattering component of the mobility has been extracted and characterized as a function of inversion charge density and cesium dose.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/16.21184