Low-threshold-current yellow BeZnCdSe quantum-well ridge-waveguide laser diodes under continuous-wave room-temperature operation
Low-threshold-current yellow BeZnCdSe single-quantum-well (SQW) laser diodes (LDs) have been developed by using a ridge-waveguide structure. The top p-cladding layer was etched to suppress the leakage current that flowed laterally outside of the electrode. Ridge waveguides were covered with a SiO2 l...
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Published in | Applied physics express Vol. 9; no. 1; pp. 12101 - 12104 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
The Japan Society of Applied Physics
01.01.2016
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Online Access | Get full text |
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Summary: | Low-threshold-current yellow BeZnCdSe single-quantum-well (SQW) laser diodes (LDs) have been developed by using a ridge-waveguide structure. The top p-cladding layer was etched to suppress the leakage current that flowed laterally outside of the electrode. Ridge waveguides were covered with a SiO2 layer and planarized by chemical-mechanical polishing and reactive ion etching. Room-temperature lasing under continuous-wave condition was achieved with the laser cavity formed by cleaved waveguide facets coated with high-reflectivity dielectric films. Two types of LDs with different SQW thicknesses and Cd contents were developed and compared at various waveguide widths and lengths. Yellow LDs with sub-10 mA threshold current were obtained. |
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ISSN: | 1882-0778 1882-0786 |
DOI: | 10.7567/APEX.9.012101 |