Atmospheric-Pressure Plasmas for Wide-Area Thin-Film Deposition and Etching
The present paper is focused on coating technologies compatible with industrial requirements, particularly on atmospheric pressure plasma technologies which are compatible with scaling to wide substrate widths (≥0.5 m). The AP‐PECVD reactors are designed for continuous air‐to‐air processing, and can...
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Published in | Plasma processes and polymers Vol. 4; no. 3; pp. 253 - 265 |
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Main Authors | , |
Format | Journal Article Conference Proceeding |
Language | English |
Published |
Weinheim
WILEY-VCH Verlag
23.04.2007
WILEY‐VCH Verlag Wiley-VCH |
Subjects | |
Online Access | Get full text |
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Summary: | The present paper is focused on coating technologies compatible with industrial requirements, particularly on atmospheric pressure plasma technologies which are compatible with scaling to wide substrate widths (≥0.5 m). The AP‐PECVD reactors are designed for continuous air‐to‐air processing, and can be used for deposition of non‐oxide films. Two thermal methods for atmospheric pressure processing are considered: microwave CVD and DC ArcJet‐CVD. Typical thin film growth rates for PECVD are in the range of 5–100 nm · s−1 (static) and up to 2 nm · m · s−1 (dynamic). The rates for plasma chemical etching are typically 10 times higher. A complimentary lower energy plasma source based on dielectric barrier glow discharge plasma CVD has also been explored. Developments are underway to explore uses for the coating technology, for example scratch resistant coatings on metals, barrier layers, self‐clean functional surfaces and antireflective coatings. Coating materials range from silica, titania, aluminium oxide, metal composite layers, carbon and silicon nitride. Layer properties are close to data known from low pressure PECVD. Plasma chemical etching has been developed for crystalline silicon photovoltaics. The surface textures strongly change with the precursors and the plasma parameters used. |
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Bibliography: | ArticleID:PPAP200600202 istex:2FED48AE35028108D94BAD2DCE102E81BA43BCD7 ark:/67375/WNG-Q24H5L7B-N ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 1612-8850 1612-8869 |
DOI: | 10.1002/ppap.200600202 |