Growth of InxGa1−xSb alloy semiconductor at the International Space Station (ISS) and comparison with terrestrial experiments

• Published in: NPJ microgravity Vol. 1; no. 1; p. 15011
• Main Authors: Inatomi, Y, Sakata, K, Arivanandhan, M, Rajesh, G, Nirmal Kumar, V, Koyama, T, Momose, Y, Ozawa, T, Okano, Y, Hayakawa, Y
• Format: Journal Article
• Language: English
• Published: London Nature Publishing Group UK 27.08.2015; Nature Publishing Group
• Subjects: 639/301/1005/1007; 639/301/119; Applied Microbiology; Biomedical and Life Sciences; Biotechnology; Classical and Continuum Physics; Immunology; Life Sciences; Space Exploration and Astronautics; Space Sciences (including Extraterrestrial Physics
• ISSN: 2373-8065; 2373-8065
• DOI: 10.1038/npjmgrav.2015.11

Background: In x Ga 1− x Sb is an important material that has tunable properties in the infrared (IR) region and is suitable for IR-device applications. Since the quality of crystals relies on growth conditions, the growth process of alloy semiconductors can be examined better under microgravity (μG) conditions where convection is suppressed. Aims: To investigate the dissolution and growth process of In x Ga 1− x Sb alloy semiconductors via a sandwiched structure of GaSb(seed)/InSb/GaSb(feed) under normal and μG conditions. Methods: In x Ga 1− x Sb crystals were grown at the International Space Station (ISS) under μG conditions, and a similar experiment was conducted under terrestrial conditions (1G) using the vertical gradient freezing (VGF) method. The grown crystals were cut along the growth direction and its growth properties were studied. The indium composition and growth rate of grown crystals were calculated. Results: The shape of the growth interface was nearly flat under μG, whereas under 1G, it was highly concave with the initial seed interface being nearly flat and having facets at the peripheries. The quality of the μG crystals was better than that of the 1G samples, as the etch pit density was low in the μG sample. The growth rate was higher under μG compared with 1G. Moreover, the growth started at the peripheries under 1G, whereas it started throughout the seed interface under μG. Conclusions: Kinetics played a dominant role under 1G. The suppressed convection under μG affected the dissolution and growth process of the In x Ga 1− x Sb alloy semiconductor. Semiconductors: superior alloys from space-bound ‘sandwiches’ New research shows that minimizing the effects of gravity can improve the fabrication of high-tech semiconductors. Yuko Inatomi from the Japan Aerospace Exploration Agency and co-workers investigated the growth of indium gallium antimonide (InGaSb) alloys on the International Space Station (ISS) and under standard terrestrial conditions. The team placed ‘sandwich’ samples, where a thin InSb layer sits between thicker chunks of GaSb, into a high-temperature furnace and characterized the alloy crystals formed in the mixing zone. The researchers found significant differences in crystal qualities and growth rates. Whereas samples grown on Earth had mostly curved growth interfaces, those formed on the ISS were nearly flat-a change that produced smoother distributions of atoms with a higher growth rate than typical conditions. The authors attribute the improved kinetics in microgravity to a reduction in convection forces at growth interfaces.