Vapor Pressures of Precursors for the CVD of Titanium Nitride and Tin Oxide

• Published in: Chemical vapor deposition Vol. 7; no. 3; pp. 101 - 104
• Main Authors: van Mol, A. M. B., Driessen, J. P. A. M., Linden, J. L., de Croon, M. H. J. M., Spee, C. I. M. A., Schouten, J. C.
• Format: Journal Article
• Language: English
• Published: Weinheim WILEY-VCH Verlag GmbH 01.05.2001; WILEY‐VCH Verlag GmbH; Wiley-VCH
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Cross-disciplinary physics: materials science; rheology; CVD; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Tin oxide; Titanium nitride; Vapor pressure measurement; Inorganic compounds; Vapor pressure; Transition element compounds; Oxides; Crystal growth from vapors; Experimental study; Coatings; Precursor; Titanium nitrides; Tin oxides; Nitrides; Titanium Organic compounds; Tin Organic compounds; Organic stannane
• ISSN: 0948-1907; 1521-3862
• DOI: 10.1002/1521-3862(200105)7:3<101::AID-CVDE101>3.0.CO;2-Z

A new experimental set‐up for measuring the vapor pressure of precursors at constant temperature has been devised and, for the first time, vapor pressure data for CH3SnCl3, (CH3)2SnCl2, (CH3)3SnCl, (C4H9)SnCl3, and (C4H9)Ti(N(CH3)2)3 are reported. The purpose of the set‐up is to detect and compensate for the disturbing interference of effects due to evaporation of volatile decomposition products, degassing of particles from walls, and small leaks. The system was checked by measuring the vapor pressures of SnCl4 and Sn(CH3)4.