Metal-semimetal Schottky diode relying on quantum confinement

Quantum confinement in a semimetal thin film such as bismuth (Bi) can lead to a semimetal-to-semiconductor transition which allows for the use of semimetals as semiconductors when patterned at nanoscale lengths. Bi native oxide on Bi thin film grown by molecular beam epitaxy (MBE) is investigated us...

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Published inMicroelectronic engineering Vol. 195; pp. 21 - 25
Main Authors Gity, Farzan, Ansari, Lida, König, Christian, Verni, Giuseppe Alessio, Holmes, Justin D., Long, Brenda, Lanius, Martin, Schüffelgen, Peter, Mussler, Gregor, Grützmacher, Detlev, Greer, J.C.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 05.08.2018
Elsevier BV
Subjects
Argon plasma
Bismuth
Density functional theory
Diodes
Electric contacts
Electrical properties
Electronic structure
Energy gap
Epitaxial growth
Film thickness
Mathematical models
Metalloids
Metals
Molecular beam epitaxy
Molecular beams
Molecular chains
Native oxide
Quantum confinement
Quantum physics
Schottky diodes
Schottky junction
Semiconductors
Semimetal
Thin films
X ray photoelectron spectroscopy
X-rays
XPS
Quantum confinement
Bismuth
Native oxide
Schottky junction
XPS
Semimetal
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Summary:Quantum confinement in a semimetal thin film such as bismuth (Bi) can lead to a semimetal-to-semiconductor transition which allows for the use of semimetals as semiconductors when patterned at nanoscale lengths. Bi native oxide on Bi thin film grown by molecular beam epitaxy (MBE) is investigated using X-ray photoelectron spectroscopy (XPS) to measure the elemental composition of the oxide. Also, an in-situ argon plasma etch step is developed allowing for the direct coating of the surface of thin Bi films by a metal contact to form a Schottky junction. Model structures of rhombohedral [111] and [110] bismuth thin films are found from density functional theory (DFT) calculations. The electronic structure of the model thin films is investigated using a GW correction and the formation of an energy band gap due to quantum confinement is found. Electrical characterization of the fabricated Bi-metal Schottky diode confirms a band gap opening in Bi thin film for a film thickness of approximately 5 nm consistent with the theoretical calculations. [Display omitted] •Growth and characterization of high quality crystalline Bi•Study of elemental composition of the Bi native oxide using XPS•Employing quantum confinement induced band gap in Bi film to make Schottky diode
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2018.03.022