Suppression of bias stress-induced degradation of pentacene-TFT using MoOₓ interlayer

• Published in: Current applied physics Vol. 12; no. 1; pp. 280 - 283
• Main Authors: Li, Jun, Lin, Hua-Ping, Zhou, Fang, Zhu, Wen-Qing, Jiang, Xue-Yin, Zhang, Zhi-Lin
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 2012; 한국물리학회
• Subjects: commercialization; electrodes; physics; 물리학
• ISSN: 1567-1739; 1878-1675
• DOI: 10.1016/j.cap.2011.06.020

The bias stress effect in pentacene thin-film transistors (TFTs) with and without MoOₓ interlayer was characterized. The device without MoOₓ interlayer showed a large threshold voltage shift of 5.1 V after stressing with a constant gate-source voltage of −40 V for 10000 s, while at the same condition, the device with MoOₓ interlayer showed a low threshold voltage shift of 1.9 V. The results can be attributed to the stable interface between MoOₓ/pentacene and small contact resistance change for the device with MoOₓ/Cu electrode. Pentacene-TFTs with MoOₓ interlayer showed a high field-effect mobility of 0.61 cm²/V s and excellent bias stability, which could be a significant step toward the commercialization of OTFT technology.