Universal damage factor for radiation-induced dark current in silicon devices
A new damage factor formulation is presented for describing radiation-induced dark current in silicon devices. This damage factor, K/sub dark/, is the number of carriers thermally generated per unit volume per unit time in a depletion region per unit nonionizing dose deposited in that volume. K/sub...
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| Published in | IEEE transactions on nuclear science Vol. 47; no. 6; pp. 2451 - 2459 |
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| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
New York
IEEE
01.12.2000
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
| Subjects | |
| Online Access | Get full text |
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| Abstract | A new damage factor formulation is presented for describing radiation-induced dark current in silicon devices. This damage factor, K/sub dark/, is the number of carriers thermally generated per unit volume per unit time in a depletion region per unit nonionizing dose deposited in that volume. K/sub dark/ appears to account successfully for the mean radiation-induced dark current for any silicon device in which thermal generation at bulk centers dominates. This dark-current damage factor applies for devices in all radiation environments except those that produce relatively isolated defects. Evidence is presented which strongly indicates that the defects responsible for dark current increases are not associated with impurities. |
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| AbstractList | A new damage factor formulation is presented for describing radiation-induced dark current in silicon devices. This damage factor, K/sub dark/, is the number of carriers thermally generated per unit volume per unit time in a depletion region per unit nonionizing dose deposited in that volume. K/sub dark/ appears to account successfully for the mean radiation-induced dark current for any silicon device in which thermal generation at bulk centers dominates. This dark-current damage factor applies for devices in all radiation environments except those that produce relatively isolated defects. Evidence is presented which strongly indicates that the defects responsible for dark current increases are not associated with impurities. A new damage factor formulation is presented for describing radiation-induced dark current in silicon devices. This damage factor, K (dark), is the number of carriers thermally generated per unit volume per unit time in a depletion region per unit nonionizing dose deposited in that volume. K(dark) appears to account successfully for the mean radiation-induced dark current for any silicon device in which thermal generation at bulk centers dominates. This dark-current damage factor applies for devices in all radiation environments except those that produce relatively isolated defects. Evidence is presented which strongly indicates that the defects responsible for dark current increases are not associated with impurities A new damage factor formulation is presented for describing radiation-induced dark current in silicon devices. This damage factor, K(dark), is the number of carriers thermally generated per unit volume per unit time in a depletion region per unit nonionizing dose deposited in that volume. Kdark appears to account successfully for the mean radiation-induced dark current for any silicon device in which thermal generation at bulk centers dominates. This dark-current damage factor applies for devices in all radiation environments except those that produce relatively isolated defects. Evidence is presented which strongly indicates that the defects responsible for dark current increases are not associated with impurities. (Author) A new damage factor formulation is presented for describing radiation-induced dark current in silicon devices. This damage factor, K sub(dark), is the number of carriers thermally generated per unit volume per unit time in a depletion region per unit nonionizing dose deposited in that volume. K sub(dark) appears to account successfully for the mean radiation-induced dark current for any silicon device in which thermal generation at bulk centers dominates. This dark-current damage factor applies for devices in all radiation environments except those that produce relatively isolated defects. Evidence is presented which strongly indicates that the defects responsible for dark current increases are not associated with impurities |
| Author | Srour, J.R. Lo, D.H. |
| Author_xml | – sequence: 1 givenname: J.R. surname: Srour fullname: Srour, J.R. organization: TRW Inc., Redondo Beach, CA, USA – sequence: 2 givenname: D.H. surname: Lo fullname: Lo, D.H. |
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| Snippet | A new damage factor formulation is presented for describing radiation-induced dark current in silicon devices. This damage factor, K/sub dark/, is the number... A new damage factor formulation is presented for describing radiation-induced dark current in silicon devices. This damage factor, K(dark), is the number of... A new damage factor formulation is presented for describing radiation-induced dark current in silicon devices. This damage factor, K (dark), is the number of... A new damage factor formulation is presented for describing radiation-induced dark current in silicon devices. This damage factor, K sub(dark), is the number... |
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| SubjectTerms | Current carriers Current measurement Damage Dark current Defects Depletion Deposition Devices Impurities Optical imaging Physics Radiation detectors Silicon devices Silicon radiation detectors Temperature Thermal factors |
| Title | Universal damage factor for radiation-induced dark current in silicon devices |
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