Universal damage factor for radiation-induced dark current in silicon devices

A new damage factor formulation is presented for describing radiation-induced dark current in silicon devices. This damage factor, K/sub dark/, is the number of carriers thermally generated per unit volume per unit time in a depletion region per unit nonionizing dose deposited in that volume. K/sub...

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Bibliographic Details
Published inIEEE transactions on nuclear science Vol. 47; no. 6; pp. 2451 - 2459
Main Authors Srour, J.R., Lo, D.H.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.12.2000
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Current carriers
Current measurement
Damage
Dark current
Defects
Depletion
Deposition
Devices
Impurities
Optical imaging
Physics
Radiation detectors
Silicon devices
Silicon radiation detectors
Temperature
Thermal factors
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Summary:A new damage factor formulation is presented for describing radiation-induced dark current in silicon devices. This damage factor, K/sub dark/, is the number of carriers thermally generated per unit volume per unit time in a depletion region per unit nonionizing dose deposited in that volume. K/sub dark/ appears to account successfully for the mean radiation-induced dark current for any silicon device in which thermal generation at bulk centers dominates. This dark-current damage factor applies for devices in all radiation environments except those that produce relatively isolated defects. Evidence is presented which strongly indicates that the defects responsible for dark current increases are not associated with impurities.
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ISSN:0018-9499
1558-1578
DOI:10.1109/23.903792