A highly efficient adaptive mesh approach to semiconductor device simulation-application to impact ionization analysis

In the simulation of semiconductor devices, it is desirable to obtain accurate results at low calculation costs. Both conditions are, however, difficult to satisfy simultaneously since high accuracy always calls for a high computation cost. This is mainly due to the need for a large mesh number for...

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Bibliographic Details
Published inIEEE transactions on magnetics Vol. 27; no. 5; pp. 4162 - 4165
Main Authors Dang, R., Matsushita, K., Hayashi, H.
Format Journal Article Conference Proceeding
LanguageEnglish
Published New York, NY IEEE 01.09.1991
Institute of Electrical and Electronics Engineers
Subjects
Analytical models
Applied sciences
Charge carrier processes
Computational efficiency
Computational modeling
Current density
Electronics
Exact sciences and technology
Impact ionization
Mesh generation
Poisson equations
Semiconductor devices
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Threshold voltage
Transistors
Field effect transistor
Semiconductor device
Impact ionization
MOS transistor
Computer simulation
Mesh method
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Summary:In the simulation of semiconductor devices, it is desirable to obtain accurate results at low calculation costs. Both conditions are, however, difficult to satisfy simultaneously since high accuracy always calls for a high computation cost. This is mainly due to the need for a large mesh number for the numerical solution of governing equations. Since the adaptive mesh method is known to be effective in dealing with a tradeoff problem of this kind, the authors propose an efficient adaptive mesh-generation algorithm based on an evaluation of impact ionization discretization errors. It is found that the approach reduces computation cost at no expense in accuracy.< >
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ISSN:0018-9464
1941-0069
DOI:10.1109/20.105018