Bandwidth Control and Symmetry Breaking in a Mott‐Hubbard Correlated Metal

• Published in: Advanced functional materials Vol. 33; no. 41
• Main Authors: Shoham, Lishai, Baskin, Maria, Tiwald, Tom, Ankonina, Guy, Han, Myung‐Geun, Zakharova, Anna, Caspi, Shaked, Joseph, Shay, Zhu, Yimei, Inoue, Isao H., Piamonteze, Cinthia, Rozenberg, Marcelo J., Kornblum, Lior
• Format: Journal Article
• Language: English
• Published: Hoboken Wiley Subscription Services, Inc 01.10.2023; Wiley; Wiley Blackwell (John Wiley & Sons)
• Subjects: Broken symmetry; Complexity; Compressive properties; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; correlated electrons; correlated metals; Correlation; Electronic structure; Functional materials; Materials science; Mott materials; Physics; Tensile strain; transition metal oxides
• ISSN: 1616-301X; 1616-3028
• DOI: 10.1002/adfm.202302330

Abstract In Mott materials strong electron correlation yields a spectrum of complex electronic structures. Recent synthesis advancements open realistic opportunities for harnessing Mott physics to design transformative devices. However, a major bottleneck in realizing such devices remains the lack of control over the electron correlation strength. This stems from the complexity of the electronic structure, which often veils the basic mechanisms underlying the correlation strength. This study presents control of the correlation strength by tuning the degree of orbital overlap using picometer‐scale lattice engineering. This study illustrates how bandwidth control and concurrent symmetry breaking can govern the electronic structure of a correlated SrVO 3 model system. This study shows how tensile and compressive biaxial strain oppositely affect the SrVO 3 in‐plane and out‐of‐plane orbital occupancy, resulting in the partial alleviation of the orbital degeneracy. The spectral weight redistribution under strain is derived and explained, which illustrates how high tensile strain drives the system toward a Mott insulating state. Implementation of such concepts can push correlated electron phenomena closer toward new solid‐state devices and circuits. These findings therefore pave the way for understanding and controlling electron correlation in a broad range of functional materials, driving this powerful resource for novel electronics closer toward practical realization.