Fabrication and properties of silicon-based PZT thin films for MFSFET applications

• Published in: Microelectronic engineering Vol. 66; no. 1; pp. 554 - 560
• Main Authors: Ren, Tian-Ling, Shao, Tian-Qi, Zhang, Wu-Quan, Li, Chun-Xiao, Liu, Jian-She, Liu, Li-Tian, Zhu, Jun, Li, Zhi-Jian
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.04.2003; Elsevier Science
• Subjects: Applied sciences; Compound structure devices; Electronics; Exact sciences and technology; Ferroelectric thin film; FET; Metal-ferroelectric-semiconductor (MFS); PZT; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Sol–gel; Transistors; PZT; FET; Sol–gel; Metal-ferroelectric-semiconductor (MFS); Ferroelectric thin film; Sol-gel
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/S0167-9317(02)00965-6

Fabrication and properties of lead zirconate titanate (PZT) thin films have been studied for metal-ferroelectric-semiconductor FET (MFSFET) devices. PZT-based MFS capacitors using lead titanate (PT) as seeding layers have been prepared, respectively, on p-type 〈111〉 and n-type 〈100〉 silicon wafers directly by a sol–gel method. PZT/PT films are finally annealed at 650 °C for 1 min in oxygen ambient using rapid thermal annealing (RTA). The measured memory windows of the MFS capacitors are about 1.8 and 5 V under the polarization voltages of ±5 and ±10 V correspondingly. The MFS structure can be valuable for MFSFET applications.