Scintillation properties of LuAG:Ce single crystalline films grown by LPE method

• Published in: Optical materials Vol. 32; no. 10; pp. 1360 - 1363
• Main Authors: Prusa, Petr, Mares, Jiri A., Nikl, Martin, Kucera, Miroslav, Nitsch, Karel, Hanus, Martin
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Oxford Elsevier B.V 01.08.2010; Elsevier
• Subjects: Crystal structure; Crystals; Deposition; Energy resolution; Exact sciences and technology; Fluxes; Fundamental areas of phenomenology (including applications); LPE method; LuAG:Ce; Optical materials; Optics; Photoelectron yield; Photoelectrons; Physics; Scintillation; Thin films; Time dependence; LuAG:Ce; Photoelectron yield; Scintillation; LPE method; LPE; Scintillations; Ternary compounds; Czochralski method; Thin films; Time dependence; Monocrystals; Garnets; Optical materials; Crystal growth from melts
• ISSN: 0925-3467; 1873-1252
• DOI: 10.1016/j.optmat.2010.04.010

Lu 3Al 5O 12:Ce (LuAG:Ce) thin films were grown from the PbO–B 2O 3 (PB) and BaO–B 2O 3–BaF 2 (BBB) fluxes using the liquid phase epitaxy method (LPE). Photoelectron yield, its time dependence, and energy resolution were measured under α-particle excitation. A sample of the Czochralski grown bulk LuAG:Ce single crystal was measured as a reference. Photoelectron yield of the crystal was the best, followed by slightly inferior films grown from the BBB flux and still worse performing films grown from the PB flux. The samples grown from BBB flux and reference crystal exhibit the intense slow component in scintillation response. Relative energy resolution is indirectly proportional to photoelectron yield and varies from 9% to 28%. Obtained results are discussed taking into account the influence of the flux and technology used. Additionally, influence of α-particle energy deposition and substrate scintillation response are discussed.