MBE growth and properties of GaCrN

• Published in: Journal of crystal growth Vol. 251; no. 1; pp. 327 - 330
• Main Authors: Hashimoto, M., Zhou, Y.K., Kanamura, M., Katayama-Yoshida, H., Asahi, H.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.04.2003; Elsevier
• Subjects: A3. Molecular beam epitaxy; B1. Nitrides; B2. Magnetic materials; B2. Semiconducting III–V materials; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Magnetic properties and materials; Magnetic properties of monolayers and thin films; Magnetic properties of surface, thin films and multilayers; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Molecular, atomic, ion, and chemical beam epitaxy; Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation; Other solid inorganic materials; Photoluminescence; Physics; 78.55.Cr; A3. Molecular beam epitaxy; B1. Nitrides; B2. Semiconducting III–V materials; B2. Magnetic materials; 75.50.Pp; 68.55.Bd; Inorganic compounds; Chromium nitrides; Magnetization; Gallium nitrides; Electron cyclotron-resonance; 78.55.Cr A3. Molecular beam epitaxy; Transition element compounds; Photoluminescence; Ferromagnetic materials; Crystal growth from vapors; Experimental study; Plasma sources; Dilute magnetic materials; Magnetic semiconductors; B2. Semiconducting III-V materials; Characterization; Thin films; Optical properties; Molecular beam epitaxy; Magnetic properties
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(02)02276-5

New III–V-based diluted magnetic semiconductor, GaCrN is successfully grown on sapphire (0 0 0 1) substrate by electron-cyclotron-resonance plasma-assisted molecular beam epitaxy. Magnetic and optical properties of GaCrN are studied. Ferromagnetic characteristics are confirmed at 7–400 K. Strong photoluminescence (PL) emission is also observed. PL peak energy is located at about 3.29 eV, being about 180 meV lower than the free-excitonic transition in GaN. This emission is attributed to the band-to-band transition in GaCrN.