Utilizing the SIMS technique in the study of grain boundary diffusion along twist grain boundaries in the Cu(Ni) system

• Published in: Acta materialia Vol. 50; no. 20; pp. 5079 - 5084
• Main Authors: Schwarz, S.M., Kempshall, B.W., Giannuzzi, L.A., Stevie, F.A.
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier Ltd 03.12.2002; Elsevier Science
• Subjects: Applied sciences; Condensed matter: structure, mechanical and thermal properties; Cu(Ni); Defects and impurities in crystals; microstructure; Exact sciences and technology; Grain and twin boundaries; Grain boundary diffusion; Metals. Metallurgy; Physics; SIMS; Structure of solids and liquids; crystallography; Twist grain boundaries; Cu(Ni); SIMS; Grain boundary diffusion; Twist grain boundaries; Grain boundaries; Crystal defects; Tilt boundaries; Binary systems; Nickel; Copper; Experimental study
• DOI: 10.1016/S1359-6454(02)00362-2
• ISSN: 1359-6454

The secondary ion mass spectrometry (SIMS) technique was used to study grain boundary diffusion along (100) twist grain boundaries in the Cu(Ni) system. Concentration profiles of Ni down Cu twist grain boundaries with nominal disorientation angles of 10°, Σ5 (36.87°), and 45°, were measured using the SIMS technique. The average activation energy for grain boundary diffusion, Q b, was found to be 245±22, 140±10, and 102±15 kJ/mol, for the 10°, Σ5, and 45° twist grain boundaries, respectively. The average grain boundary diffusion pre-exponential term, s δD bo, was found to be 9.6±1.24×10 −9, 1.1±0.17×10 −14, and 1.3±0.36×10 −16 m 3 /s, for the 10°, Σ5, and 45° twist grain boundaries, respectively.