Utilizing the SIMS technique in the study of grain boundary diffusion along twist grain boundaries in the Cu(Ni) system
The secondary ion mass spectrometry (SIMS) technique was used to study grain boundary diffusion along (100) twist grain boundaries in the Cu(Ni) system. Concentration profiles of Ni down Cu twist grain boundaries with nominal disorientation angles of 10°, Σ5 (36.87°), and 45°, were measured using th...
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Published in | Acta materialia Vol. 50; no. 20; pp. 5079 - 5084 |
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Main Authors | , , , |
Format | Journal Article |
Language | English |
Published |
Oxford
Elsevier Ltd
03.12.2002
Elsevier Science |
Subjects | |
Online Access | Get full text |
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Summary: | The secondary ion mass spectrometry (SIMS) technique was used to study grain boundary diffusion along (100) twist grain boundaries in the Cu(Ni) system. Concentration profiles of Ni down Cu twist grain boundaries with nominal disorientation angles of 10°,
Σ5 (36.87°), and 45°, were measured using the SIMS technique. The average activation energy for grain boundary diffusion,
Q
b, was found to be 245±22, 140±10, and 102±15 kJ/mol, for the 10°,
Σ5, and 45° twist grain boundaries, respectively. The average grain boundary diffusion pre-exponential term, s
δD
bo, was found to be 9.6±1.24×10
−9, 1.1±0.17×10
−14, and
1.3±0.36×10
−16
m
3
/s,
for the 10°,
Σ5, and 45° twist grain boundaries, respectively. |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 1359-6454 1873-2453 |
DOI: | 10.1016/S1359-6454(02)00362-2 |