Spintronics with Si quantum dots

Electron transport through small Si quantum dot is investigated. The B-dependence of energy levels is dominated by the Zeeman shift, allowing us to measure the spin difference between two successive ground states directly. Combined with the ability to change the number of electrons N in the dot betw...

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Bibliographic Details
Published inMicroelectronic engineering Vol. 63; no. 1; pp. 147 - 153
Main Authors Rokhinson, Leonid P, Guo, Lingue J, Chou, Steven Y, Tsui, Daniel C
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.08.2002
Elsevier Science
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Coulomb blockade
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in mesoscopic systems
Electronic transport in multilayers, nanoscale materials and structures
Exact sciences and technology
Physics
Quantum dots
Si nanostructures
Spin blockade
Si nanostructures
Spin blockade
Quantum dots
Coulomb blockade
Transport processes
Silicon
Spintronics
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Summary:Electron transport through small Si quantum dot is investigated. The B-dependence of energy levels is dominated by the Zeeman shift, allowing us to measure the spin difference between two successive ground states directly. Combined with the ability to change the number of electrons N in the dot between 0 and 30, we are able to map the spin of the the dot as a function of N and B. Various spin-related phenomena, such as singlet–triplet transitions and spin blockade, are observed.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(02)00609-3