Unique reliability characteristics of fully depleted silicon-on-insulator tunneling FET

This study investigated the unique reliability characteristics of tunneling field effect transistors (TFETs) by comparing the effects of positive bias temperature instability (PBTI) and hot carrier injection (HCI) stresses. In case of hot carrier injection (HCI) stress, the interface trap generation...

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 57; no. 4S; p. 4
Main Authors Kang, Soo Cheol, Lim, Donghwan, Lim, Sung Kwan, Noh, Jinwoo, Kim, Seung-Mo, Lee, Sang Kyung, Choi, Changhwan, Lee, Byoung Hun
Format Journal Article
LanguageEnglish
Published Tokyo The Japan Society of Applied Physics 01.04.2018
Japanese Journal of Applied Physics
Subjects
Carrier injection
Degradation
Field effect transistors
MOSFETs
Reliability
Semiconductor devices
Stability
Stresses
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Summary:This study investigated the unique reliability characteristics of tunneling field effect transistors (TFETs) by comparing the effects of positive bias temperature instability (PBTI) and hot carrier injection (HCI) stresses. In case of hot carrier injection (HCI) stress, the interface trap generation near a p/n+ region was the primary degradation mechanism. However, strong recovery after a high-pressure hydrogen annealing and weak degradation at low temperature indicates that the degradation mechanism of TFET under the HCI stress is different from the high-energy carrier stress induced permanent defect generation mechanism observed in MOSFETs. Further study is necessary to identify the exact location and defect species causing TFET degradation; however, a significant difference is evident between the dominant reliability mechanism of TFET and MOSFET.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.57.04FB02