Orientation selection in functional oxide thin films

• Published in: Journal of the European Ceramic Society Vol. 24; no. 6; pp. 969 - 974
• Main Authors: Norga, G.J., Fé, L., Vasiliu, F., Fompeyrine, J., Locquet, J.-P., Van der Biest, O.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Oxford Elsevier Ltd 2004; Elsevier
• Subjects: Applied sciences; Building materials. Ceramics. Glasses; Ceramic industries; Chemical industry and chemicals; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Dielectric properties; Electrotechnical and electronic ceramics; Exact sciences and technology; Ferroelectric properties; Functional application; Liquid phase epitaxy; deposition from liquid phases (melts, solutions, and surface layers on liquids); Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; RZT; Sol-gel process; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Technical ceramics; Thin film structure and morphology; Ferroelectric properties; RZT; Sol-gel process; Dielectric properties; Functional application; Crystal orientation; Electrical properties; Process control; Lead titanates; PZT; RHEED; Experimental study; Preferred orientation; Texture; Oxide ceramics; Lead zirconates; Thin film; Transmission electron microscopy; Sol gel process; Molecular beam epitaxy; Crystal growth from solutions; Manufacturing; Lead Titanates Zirconates; Electroceramics
• ISSN: 0955-2219; 1873-619X
• DOI: 10.1016/S0955-2219(03)00405-9

Mechanisms for orientation selection in complex oxide thin films are discussed, focusing on two examples: (1) development of a preferential texture in sol-gel prepared polycrystalline PZT films on Pt electrode layers and (2) selection of oxides for epitaxial growth on Si (111) and (100). In sol-gel PZT, a direct link was found between the formation of a well crystallized transient fluorite phase, promoted by reducing pyrolysis conditions, and the emergence of a strongly preferred (111) texture after crystallization. Meanwhile, in the MBE growth of epitaxial oxides on silicon, matching of silicon and oxide surface lattices is not a sufficient condition to achieve layer-by-layer growth, needed for planar films. In fact, for planar growth on Si(111), fluorite-structure compounds are required, while rocksalt and perovskite structure oxides are suited for the growth of low-roughness films on Si(100). These examples illustrate the important role played by surface energy in orientation selection.