Carbon-doped InAl(Ga)As with low oxygen contamination

• Published in: Journal of crystal growth Vol. 254; no. 1; pp. 6 - 13
• Main Authors: Kurihara, K, Shimoyama, K
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.06.2003; Elsevier
• Subjects: A3. Metalorganic vapor phase epitaxy; B1. Carbon; B1. CBr 4; B1. InAlAs alloys; B1. Oxygen; B2. III–V semiconductors; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Defects and impurities: doping, implantation, distribution, concentration, etc; Exact sciences and technology; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Vapor phase epitaxy; growth from vapor phase; B1. InAlAs alloys; B1. CBr 4; B2. III–V semiconductors; B1. Carbon; B1. Oxygen; A3. Metalorganic vapor phase epitaxy; 81.15.Gh; 68.55.Ln; 81.05.Ea; Gallium arsenides; B1. CBr4; Inorganic compounds; Electrical conductivity; Property composition relationship; Doping; Photoluminescence; VPE; Crystal growth from vapors; Thin films; Oxygen additions; 68.55.Ln A3. Metalorganic vapor phase epitaxy; Optical properties; B2. III-V semiconductors; Aluminium arsenides; Electrical properties; Experimental study; Carbon additions; Contamination; Indium arsenides; MOVPE method; Low pressure; Carrier density; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(03)01138-2

Carbon doping in an InAl(Ga)As material system grown by LP-MOVPE has been studied. Reduction of oxygen in carbon-doped InAlAs has been demonstrated by investigating the incorporation mechanisms of carbon and oxygen, and the effect of removal of oxygen by bromine. Through use of these growth procedures, we have successfully made a C-doped InAlAs with low oxygen contamination for the first time. The electrical and optical characteristics of the C-doped InAlAs have been investigated. In the material with low oxygen incorporation, the p-type carrier density is almost the same as the carbon concentration. For optical properties, photo-luminescence measurements have revealed that reduction in oxygen is the key to achieving InAlAs layers with high optical quality. The results indicate that C-doped InAlAs crystals with low oxygen would be well worth using in laser structures.