Simulation assisted design of a gallium phosphide n–p photovoltaic junction

A gallium phosphide photovoltaic junction is reported. Using a n–p structure, a gallium phosphide junction is grown on a gallium phosphide substrate by molecular beam epitaxy. Junction design is presented with measurements of the dark and light response. The light current was measured under an illum...

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Bibliographic Details
Published inSolar energy materials and solar cells Vol. 94; no. 5; pp. 865 - 868
Main Authors Allen, Charles R., Jeon, Jong-Hyeok, Woodall, Jerry M.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 01.05.2010
Elsevier
Subjects
Applied sciences
CPV
Energy
Equipments, installations and applications
Exact sciences and technology
Gallium phosphide
Multi-junction
Natural energy
Photovoltaic conversion
Simulation
Solar cell
Solar cells. Photoelectrochemical cells
Solar energy
Solar cell
CPV
Gallium phosphide
Simulation
Multi-junction
Photovoltaic system
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Summary:A gallium phosphide photovoltaic junction is reported. Using a n–p structure, a gallium phosphide junction is grown on a gallium phosphide substrate by molecular beam epitaxy. Junction design is presented with measurements of the dark and light response. The light current was measured under an illumination of air mass (AM) 1.5. Without an anti-reflective coating, a V oc of 1.53 V and a J sc of 0.959 mA / cm 2 is achieved at one-sun AM1.5 global. A simulation of the junction is presented with best-fit parameters. Strategies for efficiency improvements are discussed which yield a simulated V oc of 1.93 V and an AM 1.5 efficiency of 14% at 20 suns. Justification of a 51.3% efficient, ideal, multi-junction device is also presented.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
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ISSN:0927-0248
1879-3398
DOI:10.1016/j.solmat.2010.01.009