Pulsed characterisation of GaN HEMTs on Si (1 1 1) substrate

The DC and RF power characteristics of GaN HEMTs under continuous wave (CW) and pulsed load-pull measurement are examined, in this article. The results give a comprehensive understanding of self-heating effects and allow improved heat dissipation, by pulsed measurement. The measured output power inc...

Full description

Saved in:
Bibliographic Details
Published inInternational journal of electronics Vol. 100; no. 7; pp. 890 - 899
Main Authors Liao, S.Y., Kao, Hsuan-ling, Chang, T., Chang, H.M., Yeh, C.S., Wu, C.L., Horng, K.Y., Chang, L.B.
Format Journal Article
LanguageEnglish
Published Abingdon Taylor & Francis 01.07.2013
Taylor & Francis LLC
Subjects
Continuous wave
Electric power
Electronics
Energy dissipation
Gallium nitrides
GaN
Heating
High electron mobility transistors
Measurement
Noise levels
pulsed load-pull
Radio frequencies
Semiconductor devices
Silicon substrates
Online AccessGet full text

Cover

More Information
Summary:The DC and RF power characteristics of GaN HEMTs under continuous wave (CW) and pulsed load-pull measurement are examined, in this article. The results give a comprehensive understanding of self-heating effects and allow improved heat dissipation, by pulsed measurement. The measured output power increases under the pulse load-pull measurement, due to the isothermal environment. The RF power performance for pulsed mode was measured at 3.5 GHz, with 18.4 dB power gain and a large 3.5 W/mm power output, under pulse load-pull, which is a 3.25 dB improvement, compared to CW operation. The relationship of output power and impedance is determined by load-pull measurement.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0020-7217
1362-3060
DOI:10.1080/00207217.2012.727347