A high breakdown-voltage SiCN/Si heterojunction diode for high-temperature applications

Cubic crystalline p-SiCN films are deposited on n-Si[100] substrates to form SiCN/Si heterojunction diodes (HJDs) with a rapid thermal chemical vapor deposition (RTCVD) technique. The developed SiCN/Si HJDs exhibit good rectifying properties up to 200/spl deg/C. At room temperature, the reverse brea...

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Bibliographic Details
Published inIEEE electron device letters Vol. 23; no. 3; pp. 142 - 144
Main Authors Ting, Shyh-Fann, Fang, Yean-Kuen, Hsieh, Wen-Tse, Tsair, Yong-Shiuan, Chang, Cheng-Nan, Lin, Chun-Sheng, Hsieh, Ming-Chun, Chiang, Hsin-Che, Ho, Jyh-Jier
Format Journal Article
LanguageEnglish
Published New York IEEE 01.03.2002
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Breakdown
Chemical vapor deposition
Crystallization
Density
Diodes
Electric potential
Electric resistance
Heterojunctions
Leakage current
Optical films
Semiconductor films
Silicon
Silicon carbonitride
Substrates
Temperature
Voltage
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Summary:Cubic crystalline p-SiCN films are deposited on n-Si[100] substrates to form SiCN/Si heterojunction diodes (HJDs) with a rapid thermal chemical vapor deposition (RTCVD) technique. The developed SiCN/Si HJDs exhibit good rectifying properties up to 200/spl deg/C. At room temperature, the reverse breakdown voltage is more than 29 V at the leakage current density of 1.2/spl times/10/sup -4/ A/cm/sup 2/. Even at 200/spl deg/C, the typical breakdown voltage of SiCN/Si HJDs is still preserved about 5 V at the leakage current density of 1.47/spl times/10/sup -4/ A/cm/sup 2/. These properties are better than the /spl beta/-SiC on Si HJDs for high temperature applications.
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ISSN:0741-3106
1558-0563
DOI:10.1109/55.988818