Nonlinear transport in quantum point contact structures

We have investigated the magnetotransport properties under nonlinear conditions in quantum point contact structures fabricated on high mobility AlGaAs/GaAs two-dimensional electron gas (2DEG) layers. Nonlinearities in the I– V characteristics are observed at the threshold for conduction when biased...

Full description

Saved in:
Bibliographic Details
Published inMicroelectronic engineering Vol. 63; no. 1; pp. 123 - 127
Main Authors Krishnaswamy, A.E, Goodnick, S.M, Wybourne, M.N, Berven, C
Format Journal Article Conference Proceeding
LanguageEnglish
Published Amsterdam Elsevier B.V 01.08.2002
Elsevier Science
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in mesoscopic systems
Exact sciences and technology
Nanostructures
Physics
Quantum dots
Semiconductors
Transport
Nanostructures
Semiconductors
Transport
Quantum dots
Non linear effect
Magnetoresistance
Quantum transport
Online AccessGet full text

Cover

More Information
Summary:We have investigated the magnetotransport properties under nonlinear conditions in quantum point contact structures fabricated on high mobility AlGaAs/GaAs two-dimensional electron gas (2DEG) layers. Nonlinearities in the I– V characteristics are observed at the threshold for conduction when biased initially from the tunneling regime as observed previously. We observe that this non-ideality is enhanced by a magnetic field normal to the plane of the 2DEG. This behavior is interpreted in terms of corrections to the Landauer model extended to nonequilibrium conditions.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0167-9317
1873-5568
DOI:10.1016/S0167-9317(02)00618-4