Surface potential at threshold in thin-film SOI MOSFET's
The usual condition for threshold in bulk MOSFETs, of equal rates of change with gate voltage of the inversion and bulk charges, is suitably modified to describe threshold in fully depleted SOI MOSFETs. Using this modified condition the value of the surface potential at threshold in fully depleted t...
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Published in | IEEE transactions on electron devices Vol. 40; no. 6; pp. 1129 - 1133 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.06.1993
Institute of Electrical and Electronics Engineers |
Subjects | |
Online Access | Get full text |
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Summary: | The usual condition for threshold in bulk MOSFETs, of equal rates of change with gate voltage of the inversion and bulk charges, is suitably modified to describe threshold in fully depleted SOI MOSFETs. Using this modified condition the value of the surface potential at threshold in fully depleted transistors is obtained analytically in terms of device dimensions, film doping level, and applied voltages. The results are in excellent agreement with one-dimensional numerical simulations, and it is shown that the surface potential at threshold may differ significantly from 2 phi /sub F/, the value conventionally assumed.< > |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/16.214739 |