Surface potential at threshold in thin-film SOI MOSFET's

The usual condition for threshold in bulk MOSFETs, of equal rates of change with gate voltage of the inversion and bulk charges, is suitably modified to describe threshold in fully depleted SOI MOSFETs. Using this modified condition the value of the surface potential at threshold in fully depleted t...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 40; no. 6; pp. 1129 - 1133
Main Authors Mazhari, B., Ioannou, D.E.
Format Journal Article
LanguageEnglish
Published New York, NY IEEE 01.06.1993
Institute of Electrical and Electronics Engineers
Subjects
Applied sciences
Capacitance
Couplings
Doping
Electronics
Exact sciences and technology
MOSFET circuits
Numerical simulation
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductor films
Silicon
Subthreshold current
Threshold voltage
Transistors
Voltage threshold
Silicon on insulator technology
Field effect transistor
Theoretical model
Numerical simulation
MOS transistor
Thin film transistor
Surface potential
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Summary:The usual condition for threshold in bulk MOSFETs, of equal rates of change with gate voltage of the inversion and bulk charges, is suitably modified to describe threshold in fully depleted SOI MOSFETs. Using this modified condition the value of the surface potential at threshold in fully depleted transistors is obtained analytically in terms of device dimensions, film doping level, and applied voltages. The results are in excellent agreement with one-dimensional numerical simulations, and it is shown that the surface potential at threshold may differ significantly from 2 phi /sub F/, the value conventionally assumed.< >
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/16.214739