Reconsideration of Si pillar thermal oxidation mechanism

• Published in: Japanese Journal of Applied Physics Vol. 57; no. 6S3; pp. 6 - 12
• Main Authors: Kageshima, Hiroyuki, Shiraishi, Kenji, Endoh, Tetsuo
• Format: Journal Article
• Language: English
• Published: Tokyo The Japan Society of Applied Physics 01.06.2018; Japanese Journal of Applied Physics
• Subjects: Compressive properties; Emission; Oxidation; Silicon; Viscosity; Viscous flow

The mechanism of Si pillar thermal oxidation is considered. The Si emission is discussed in the oxidation of three-dimensional structures, which must be fundamentally important to understand the oxidation mechanism. It is confirmed that the Si emission is enhanced in the three-dimensional structures...