Reconsideration of Si pillar thermal oxidation mechanism

• Published in: Japanese Journal of Applied Physics Vol. 57; no. 6S3; pp. 6 - 12
• Main Authors: Kageshima, Hiroyuki, Shiraishi, Kenji, Endoh, Tetsuo
• Format: Journal Article
• Language: English
• Published: Tokyo The Japan Society of Applied Physics 01.06.2018; Japanese Journal of Applied Physics
• Subjects: Compressive properties; Emission; Oxidation; Silicon; Viscosity; Viscous flow
• ISSN: 0021-4922; 1347-4065
• DOI: 10.7567/JJAP.57.06KD02

The mechanism of Si pillar thermal oxidation is considered. The Si emission is discussed in the oxidation of three-dimensional structures, which must be fundamentally important to understand the oxidation mechanism. It is confirmed that the Si emission is enhanced in the three-dimensional structures by the geometrical and stress effects. The larger effect is expected for Si spheres rather than for Si pillars. More enhanced Si emission can be expected for the smaller spheres. Then the mechanism of Si missing and the effect of Si emission are also discussed. The oxide viscous flow mechanism is the promising candidate to explain the Si missing, because the oxide viscosity could be reduced by the SiO incorporation and the compressive stress. The geometrical effect induces the viscosity gradient, which is important to induce the Si missing. Interplay of the emitted SiO and the accumulated stress is the key in Si pillar oxidation. Careful approaches are suggested for the oxidation of three-dimensional structures.