Voltage modulation efficiency in scanning capacitance microscopy

• Published in: Ultramicroscopy Vol. 224; p. 113266
• Main Authors: Chang, Mao-Nan, Chen, Yung-Kuang, Kao, Hung-Yi, Chen, Jhih-Yang, Liu, Chun-Hsien, Lee, Yao-Jen
• Format: Journal Article
• Language: English
• Published: Netherlands Elsevier B.V 01.05.2021
• ISSN: 0304-3991; 1879-2723
• DOI: 10.1016/j.ultramic.2021.113266

•Clarification of the fine relationship between the scanning capacitance microscopic signal and the modulation voltage•A promising way to control and improve the reliability of scanning capacitance microscopy•A new approach to precise and quantitative thickness measurement for an insulating layer This paper reports a novel investigation of the voltage modulation efficiency (VME) in scanning capacitance microscopy (SCM). A signal intensity model was used to define the VME, which is dependent on the impedance components in an SCM setup. In SCM, the VME was found to play a key mediating role in the close relationship between the signal intensity and the modulation voltage, providing an indicator for the surface treatment and the back-contact process of an SCM specimen. We observed that, for silicon-based specimens, ultraviolet-assisted oxidation and microwave annealing improved the specimen surface and the back-contact, respectively, which increased the VME. It was also found that a high modulation voltage and a large back-contact area may induce a significant stray capacitance around the conductive tip and, hence, lower the VME. The VME degradation not only decreased the SCM signal intensity but also reduced the image contrast in the regions with high carrier concentrations. In addition, our experimental results further revealed that the signal intensity model also provided a promising opportunity to establish a precise and quantitative method for measuring the thickness of insulating layers.