A detailed study of the gate/drain voltage dependence of RTN in bulk pMOS transistors

Random Telegraph Noise (RTN) has attracted increasing interest in the last years. This phenomenon introduces variability in the electrical properties of transistors, in particular in deeply-scaled CMOS technologies, which can cause performance degradation in circuits. In this work, the dependence of...

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Bibliographic Details
Published inMicroelectronic engineering Vol. 215; p. 111004
Main Authors Saraza-Canflanca, P., Martin-Martinez, J., Castro-Lopez, R., Roca, E., Rodriguez, R., Nafria, M., Fernandez, F.V.
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 15.07.2019
Elsevier BV
Subjects
Bias
Bias dependence
CMOS
Dependence
Electric noise
Electric potential
Electrical properties
Electronics
Parameters
Performance degradation
Probability
Random telegraph noise
Semiconductor devices
Transistors
Variability
Voltage
CMOS
Transistors
Random telegraph noise
Variability
Bias dependence
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Summary:Random Telegraph Noise (RTN) has attracted increasing interest in the last years. This phenomenon introduces variability in the electrical properties of transistors, in particular in deeply-scaled CMOS technologies, which can cause performance degradation in circuits. In this work, the dependence of RTN parameters, namely current jump amplitude and emission and capture time constants, on the bias conditions, both VG and VD, has been studied on a set of devices, with a high granularity in a broad voltage range. The results obtained for the VG dependences corroborate previous works, but suggest a unique trend for all the devices in a VG range that goes from the near-threshold region up to voltages over the nominal operation bias. However, different trends have been observed in the parameters dependence for the case of VD. From the experimental data, the probabilities of occupation of the associated defects have been evaluated, pointing out large device-to-device dispersion in the VD dependences. [Display omitted] •Dependence of RTN amplitude on gate voltage corroborates previous literature.•Dependence of RTN time constants on gate voltage reinforces its link with BTI•Two different behaviors for the dependence of RTN amplitude on drain voltage found.•Not a unique trend for the dependence of RTN time constants on drain voltage discovered
ISSN:0167-9317
1873-5568
DOI:10.1016/j.mee.2019.111004