Dielectric Properties and Structures of Zn-doped Barium Zirconate Titanate Films

The Zn-doped Ba(Zr 0.2 Ti 0.8 )O 3 (BZT) films were prepared by sol-gel processing on Pt/Ti/SiO 2 /Si substrates. The crystal structures, surface morphology, dielectric properties of Zn-doped BZT films were investigated as a function of Zn content. It is found that the films belong to the perovskite...

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Bibliographic Details
Published inIntegrated ferroelectrics Vol. 150; no. 1; pp. 66 - 74
Main Authors Liu, Xingbing, Deng, Xiaoling, Liu, Kaihua, Cai, Wei, Fu, Chunlin
Format Journal Article
LanguageEnglish
Published Philadelphia Taylor & Francis Group 02.01.2014
Taylor & Francis Ltd
Subjects
Barium zirconates
Barium zirconium titanate
Crystal structure
Curie temperature
Dielectric constant
Dielectric properties
doping
Morphology
Perovskite
Silicon substrates
Substrates
Titanates
Zinc
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Summary:The Zn-doped Ba(Zr 0.2 Ti 0.8 )O 3 (BZT) films were prepared by sol-gel processing on Pt/Ti/SiO 2 /Si substrates. The crystal structures, surface morphology, dielectric properties of Zn-doped BZT films were investigated as a function of Zn content. It is found that the films belong to the perovskite structure. In addition, the dielectric constant decreases at first and then increases with the increasing of Zn content, but the dielectric loss decreases with the increasing of Zn content at room temperature. Finally, it also can be found that the Curie temperature of the Zn-doped BZT films is lower than that of the pure BZT films.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:1058-4587
1607-8489
DOI:10.1080/10584587.2014.874258