Irradiation temperature dependence of radiation damage in STI Si diodes

• Published in: Microelectronic engineering Vol. 66; no. 1; pp. 517 - 521
• Main Authors: Ohyama, H., Hayama, K., Takakura, K., Miura, T., Shigaki, K., Jono, T., Simoen, E., Poyai, A., Claeys, C.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.04.2003; Elsevier Science
• Subjects: Applied sciences; Degradation of performance; Diodes; Electronics; Exact sciences and technology; High-temperature electron irradiation; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; STI (shallow trench isolation) diode; High-temperature electron irradiation; STI (shallow trench isolation) diode; Degradation of performance

Results are presented of a detailed study of the effects of a high-temperature 2-MeV electron irradiation on the performance degradation of STI (shallow trench isolation) diodes. Reverse current increases after irradiation. After 20 °C irradiation, two majority hole capture levels with (Ev+0.18 eV)...