Irradiation temperature dependence of radiation damage in STI Si diodes

• Published in: Microelectronic engineering Vol. 66; no. 1; pp. 517 - 521
• Main Authors: Ohyama, H., Hayama, K., Takakura, K., Miura, T., Shigaki, K., Jono, T., Simoen, E., Poyai, A., Claeys, C.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.04.2003; Elsevier Science
• Subjects: Applied sciences; Degradation of performance; Diodes; Electronics; Exact sciences and technology; High-temperature electron irradiation; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; STI (shallow trench isolation) diode; High-temperature electron irradiation; STI (shallow trench isolation) diode; Degradation of performance
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/S0167-9317(02)00937-1

Results are presented of a detailed study of the effects of a high-temperature 2-MeV electron irradiation on the performance degradation of STI (shallow trench isolation) diodes. Reverse current increases after irradiation. After 20 °C irradiation, two majority hole capture levels with (Ev+0.18 eV) and (Ev+0.34 eV) were induced. The degradation of the device performance and the introduction rate of the lattice defects decrease with increasing irradiation temperature. This result suggests that the creation and recovery of the radiation damage proceeds simultaneously at high temperature.