Degradation mechanisms in SOI n-channel LDMOSFETs

• Published in: Microelectronic engineering Vol. 59; no. 1; pp. 489 - 495
• Main Authors: Vandooren, A, Conley, J.F, Cristoloveanu, S, Mojarradi, M, Kolawa, E
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.11.2001; Elsevier Science
• Subjects: Applied sciences; Electronics; Exact sciences and technology; High-voltage; Hot-carrier degradation; Irradiation; LDMOSFET; Low temperature; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; SOI; Transistors; Hot-carrier degradation; High-voltage; Irradiation; LDMOSFET; SOI; Low temperature; Performance evaluation; Waveform; MOSFET; Voltage current curve; Lateral diffusion; n channel; Modeling; Silicon on insulator technology; Gamma irradiation; Experimental result; High voltage; Equivalent circuit; Hot carrier; Series resistance; Reliability; Transconductance; Electrical characteristic; Charge carrier injection
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/S0167-9317(01)00663-3

The back-gate bias modifies the series resistance and the overall performance of LDMOSFETs in linear and saturation operation. The influence of the back-gate under degradation conditions is investigated. Degradations due to irradiation, hot carrier injection, and low temperature are complex and differ from the case of low-voltage CMOS transistors. The degradation mechanisms are clearly identified and the main parameters are extracted using the model of the LDMOS in linear operation.