Annealing study of Sb + and Al + ion-implanted ZnO

• Published in: Superlattices and microstructures Vol. 38; no. 4; pp. 464 - 471
• Main Authors: Børseth, T.M., Christensen, J.S., Maknys, K., Hallén, A., Svensson, B.G., Kuznetsov, A.Yu
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.10.2005
• Subjects: scanning capacitance microscopy
• ISSN: 0749-6036; 1096-3677; 1096-3677
• DOI: 10.1016/j.spmi.2005.08.017

In this work we have studied diffusion and electrical activation in Al + and Sb + implanted ZnO samples using secondary ion mass spectrometry (SIMS), scanning spreading resistance microscopy (SSRM) and scanning capacitance microscopy (SCM). The samples were hydrothermally grown and post-implant annealing was performed at 800, 900 and 1000  ∘C in pure oxygen atmosphere. After each annealing step the samples were characterized with SSRM/SCM and SIMS. The thermal treatments did not induce any significant impurity redistribution as measured by SIMS, while electrical compensation is observed by SSRM/SCM for the Sb-implanted sample yielding less n-doping than in the as-grown samples. In the Al-implanted samples, an increase in carrier concentration is observed; we ascribe this to Al-related donors and possibly interstitial lithium, a common residual impurity in the samples that have been shown to be very mobile by SIMS.