Be diffusion behavior in InGaAs, InGaAsP and InGaAs/InGaAsP GSMBE structures

• Published in: Journal of crystal growth Vol. 252; no. 1; pp. 14 - 18
• Main Authors: Koumetz, S., Dubois, C.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.05.2003; Elsevier
• Subjects: A1. Diffusion; A3. Gas source molecular beam epitaxy; B1. Be; B1. InGaAs; B1. InGaAsP; Condensed matter: structure, mechanical and thermal properties; Defects and impurities: doping, implantation, distribution, concentration, etc; Exact sciences and technology; Physics; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; 71.55.Eq; A3. Gas source molecular beam epitaxy; B1. Be; B1. InGaAs; A1. Diffusion; 66.30.Jt; B1. InGaAsP; 81.15.Hi; Gallium arsenides; Inorganic compounds; n-type conductors; Doping; Thin films; Gallium phosphides; Rapid thermal annealing; Microelectronic fabrication; Bl. InGaAsP; Bl. Be; Diffusion; Depth profiles; Bl. InGaAs; Beryllium additions; Experimental study; Indium arsenides; Indium phosphides; Heterojunctions; Impurity diffusion; GSMBE method; 81.15.Hi Al. Diffusion; III-V semiconductors
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/S0022-0248(02)02483-1

Results on Be diffusion during post-growth rapid thermal annealing at 750°C and 850°C in InGaAs, InGaAsP homostructures and InGaAs/InGaAsP heterostructures, grown by gas source molecular beam epitaxy, are reported. Profiles calculated with the kick-out model can be fitted to experimental secondary ion mass spectrometry profiles assuming Be to diffuse as neutral interstitial species.