Characterisation of JSR’s spin-on hardmask FF-02

• Published in: Microelectronic engineering Vol. 70; no. 2; pp. 308 - 313
• Main Authors: Das, A., Le, Q.T., Furukawa, Y., Nguyen, V.H., Terzieva, V., de Theije, F., Whelan, C.M., Maenhoudt, M., Struyf, H., Tókei, Zs, Iacopi, F., Stucchi, M., Carbonell, L., Vos, I., Bender, H., Patz, M., Beyer, G., Van Hove, M., Maex, K.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.11.2003; Elsevier Science
• Subjects: Applied sciences; Electrical properties; Electronics; Exact sciences and technology; FF-02 (JSR); Microelectronic fabrication (materials and surfaces technology); Sealing; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Spin-on hardmask; FF-02 (JSR); Electrical properties; Spin-on hardmask; Sealing; Interfacial layer; Performance evaluation; Thermal stability; Microelectronic fabrication; Spin-on coatings; Humidity resistance; Dielectric thin films; Leakage current; Electrical characteristic
• ISSN: 0167-9317; 1873-5568
• DOI: 10.1016/S0167-9317(03)00367-8

Some of the spin-on interlayer dielectrics (ILD) with dielectric constant k below 2.3, targeted for the 65 nm node and below, are available with their spin-on hard masks (SoHM) to reduce the total effective capacitance and to provide high selectivity to their respective ILDs during integration. In this work, FF-02, JSR’s SoHM is characterised. Its thermal stability, chemical compatibility to stripping solutions and resistance to moisture are investigated. Methods to seal the surface of FF-02 to chemicals are explored. Electrical properties including the dielectric constant, leakage current and breakdown fields are evaluated in planar capacitors and in single damascene structures.