Significant Enhancement of Light Extraction from Light Emitting Diodes with Reverse-Tapered Microholes
The fabrication of InGaN/GaN light emitting diodes with reverse-tapered microholes (RH-LEDs) and their optical —electrical properties were demonstrated. A high light extraction efficiency was realized with the RH-LEDs owing to the diffraction of light and effective extraction of photons caused by th...
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Published in | Journal of Light & Visual Environment Vol. 32; no. 2; pp. 124 - 128 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
Tokyo
The Illuminating Engineering Institute of Japan
2008
Japan Science and Technology Agency |
Subjects | |
Online Access | Get full text |
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Summary: | The fabrication of InGaN/GaN light emitting diodes with reverse-tapered microholes (RH-LEDs) and their optical —electrical properties were demonstrated. A high light extraction efficiency was realized with the RH-LEDs owing to the diffraction of light and effective extraction of photons caused by the microholes. The estimated light extraction efficiency of the RH-LEDs was as high as 85%; this is 1.5 times higher than that of conventional LEDs having no microholes. The theoretical results were highly consistent with the experimental results. |
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ISSN: | 0387-8805 1349-8398 |
DOI: | 10.2150/jlve.32.124 |