Microstructural evolution of tungsten oxide thin films

• Published in: Applied surface science Vol. 256; no. 2; pp. 419 - 422
• Main Authors: Hembram, K.P.S.S., Thomas, Rajesh, Rao, G. Mohan
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 30.10.2009; Elsevier
• Subjects: Annealing; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Exact sciences and technology; Instability; Microstructure; Physics; Tungsten oxide; Tungsten oxide; Instability; Annealing; Microstructure; Thin films
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2009.06.016

Tungsten oxide thin films are of great interest due to their promising applications in various optoelectronic thin film devices. We have investigated the microstructural evolution of tungsten oxide thin films grown by DC magnetron sputtering on silicon substrate. The structural characterization and surface morphology were carried out using X-ray diffraction and Scanning Electron Microscopy (SEM). The as deposited films were amorphous, where as, the films annealed above 400 °C were crystalline. In order to explain the microstructural changes due to annealing, we have proposed a “instability wheel” model for the evolution of the microstructure. This model explains the transformation of mater into various geometries within them selves, followed by external perturbation.